In recent studies, visible light communication (VLC) has been predicted to be a prospective technique in the future 6G communication systems. To suit the trend of exponentially growing connectivity, researchers have intensively studied techniques that enable multiple access (MA) in VLC systems, such as the MIMO system based on LED devices to support potential applications in the Internet of Things (IoT) or edge computing in the next-generation access network. However, their transmission rate is limited due to the intrinsic bandwidth of LED. Unfortunately, the majority of visible light laser communication (VLLC) research with beyond 10 Gb/s data rates concentrates on point-to-point links, or using discrete photodetector (PD) devices instead of an integrated array PD. In this paper, we demonstrated an integrated PD array device fabricated with a Si-substrated GaN/InGaN multiple-quantum-well (MQW) structure, which has a 4×4 array of 50μm×50μm micro-PD units with a common cathode and anode. This single-integrated array successfully provides access for two different transmitters simultaneously in the experiment, implementing a 2×2 MIMO-VLLC link at 405 nm. The highest data rate achieved is 13.2 Gb/s, and the corresponding net data rate (NDR) achieved is 12.27 Gb/s after deducing the FEC overhead, using 2.2 GHz bandwidth and superposed PAM signals. Furthermore, we assess the Huffman-coded coding scheme, which brings a fine-grain adjustment in access capacity and enhances the overall data throughput when the user signal power varies drastically due to distance, weather, or other challenges in the channel condition. As far as we know, this is the first demonstration of multiple visible light laser source access based on a single integrated GaN/InGaN receiver module.

Although the 5G wireless network has made significant advances, it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras. As a result, emerging technologies in higher frequencies including visible light communication (VLC), are becoming a hot topic. In particular, LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing (WDM) technology. This paper proposes an optimized multi-color LED array chip for high-speed VLC systems. Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency, especially in the “yellow gap” region, and it achieves significant improvement in data rate compared with earlier research. This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model, which provides an explanation of the simulation and experiment results. In the final test using a laboratory communication system, the data rates of eight channels from short to long wavelength are 3.91 Gb/s, 3.77 Gb/s, 3.67 Gb/s, 4.40 Gb/s, 3.78 Gb/s, 3.18 Gb/s, 4.31 Gb/s, and 4.35 Gb/s (31.38 Gb/s in total), with advanced digital signal processing (DSP) techniques including digital equalization technique and bit-power loading discrete multitone (DMT) modulation format.

Visible light communication (VLC) has emerged as a promising communication method in 6G. However, the development of receiving devices is much slower than that of transmitting devices, limited by materials, structures, and fabrication. In this paper, we propose and fabricate an InGaN/GaN multiple-quantum-well-based vertical-structure micro-LED-based photodetector (μPD) on a Si substrate. A comprehensive comparison of the photoelectrical performance and communication performance of three sizes of μPDs, 10, 50, and 100 μm, is presented. The peak responsivity of all three μPDs is achieved at 400 nm, while the passband full-widths at half maxima are 87, 72, and 78 nm for 10, 50, and 100 μm μPDs, respectively. The -20dB cutoff bandwidth is up to 822 MHz for 50 μm μPD. A data rate of 10.14 Gbps is experimentally demonstrated by bit and power loading discrete multitone modulation and the proposed digital pre-equalizer algorithm over 1 m free space utilizing the self-designed 4×4 50 μm μPD array as a receiver and a 450 nm laser diode as a transmitter. This is the first time a more than 10 Gbps VLC system has been achieved utilizing a GaN-based micro-PD, to the best of our knowledge. The investigation fully demonstrates the superiority of Si substrates and vertical structures in InGaN/GaN μPDs and shows its great potential for high-speed VLC links beyond 10 Gbps.

High-speed visible light communication (VLC) using light-emitting diodes (LEDs) is a potential complementary technology for beyond-5G wireless communication networks. The speed of VLC systems significantly depends on the quality of LEDs, and thus various novel LEDs with enhanced VLC performance increasingly emerge. Among them, InGaN/GaN-based LEDs on a Si-substrate are a promising LED transmitter that has enabled VLC data rates beyond 10 Gbps. The optimization on the period number of superlattice interlayer (SL), which is a stress-relief epitaxial layer in a Si-substrate LED, has been demonstrated to be an effective method to improve Si-substrate LED’s luminescence properties. However, this method to improve LED’s VLC properties is barely investigated. Hence, we for the first time experimentally studied the impact of SL period number on VLC performance. Accordingly, we designed and fabricated an integrated 4 × 4 multichromatic Si-substrate wavelength-division-multiplexing LED array chip with optimal SL period number. This chip allows up to 24.25 Gbps/1.2 m VLC transmission using eight wavelengths, which is the highest VLC data rate for an InGaN/GaN LED-based VLC system to the best of our knowledge. Additionally, a record-breaking data rate of 2.02 Gbps over a 20-m VLC link is achieved using a blue Si-substrate LED with the optimal SL period number. These results validate the effectiveness of Si-substrate LEDs for both high-speed and long-distance VLC and pave the way for Si-substrate LED design specially for high-speed VLC applications.

Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green LEDs are efficient, while the red ones are inefficient for such applications. This paper reports our work of creating efficient InGaN-based orange and red LEDs on silicon(111) substrates at low current density. Based on the structure of InGaN yellow LEDs, by simply reducing the growth temperature of all the yellow quantum wells (QWs), we obtained 599 nm orange LEDs with peak wall-plug efficiency (WPE) of 18.1% at 2A/cm2. An optimized QW structure was proposed that changed two of the nine yellow QWs to orange ones. Compared with the sample containing nine orange QWs, the sample with two orange QWs and seven yellow QWs showed similar emission spectra but a much higher peak WPE up to 24.0% at 0.8A/cm2 with a wavelength of 608 nm. The improvement of peak WPE can be attributed to the improved QW quality and the reduced active recombination volume. Subsequently, a series of efficient InGaN-based orange and red LEDs was demonstrated. With further development, the InGaN-based red LEDs are believed to be attainable and can be used in micro LED displays.

Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A/cm2 and 33.7% at 3 A/cm2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.